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MMBT4403L

Switching Transistor

SwitchingTransistor PNPSilicon Features ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBT4403L

Switching Transistor

SwitchingTransistor PNPSilicon Features ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBT4403LT1

Switching Transistor

SwitchingTransistor PNPSilicon

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMBT4403LT1

Switching Transistor(PNP Silicon)

SwitchingTransistor PNPSilicon Features ?Pb?FreePackageisAvailable

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBT4403LT1

General Purpose Transistor(PNP Silicon)

GeneralPurposeTransistors PNPSilicon

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

MMBT4403LT1

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

AVICTEK

Avic Technology

MMBT4403LT1

PNP EPITAXIAL PLANAR TRANSISTOR

Description TheMMBT4403LT1isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

TGS

Tiger Electronic Co.,Ltd

MMBT4403LT1

TRANSISTOR (NPN)

FEATURES ?Powerdissipation PCM:0.225W(Tamb=25℃) ?PluseDrain ICM:-0.6mA ?Reversevoltage V(BR)CBO:-40V ?Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

MMBT4403LT1

General Purpose Transistors

PNPSilicon ?RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH

WILLASWILLAS ELECTRONIC CORP

威倫威倫電子股份有限公司

MMBT4403LT1G

Switching Transistor(PNP Silicon)

SwitchingTransistor PNPSilicon Features ?Pb?FreePackageisAvailable

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    MMBT4403L

  • 功能描述:

    兩極晶體管 - BJT 600mA 40V PNP

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
24+
5000
公司存貨
詢價
UTC
2016+
SOT23-3
3526
假一罰十進(jìn)口原裝現(xiàn)貨原盤原標(biāo)!
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UTC
2020+
SOT23-3
80000
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MAXIM
2021++
REEL
33200
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ON(安森美)
6000
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ON(安森美)
22+
NA
8000
原廠原裝現(xiàn)貨
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ON/安森美
23+
TSSOP
10000
原裝進(jìn)口只做訂貨 尋找優(yōu)勢渠道合作
詢價
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
5000
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ON(安森美)
標(biāo)準(zhǔn)封裝
8000
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UTC
23+
SOT23-3
8560
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更多MMBT4403L供應(yīng)商 更新時間2025-2-6 16:00:00