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MJE801

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MJE801

Monolithic Construction With Built-in Base- Emitter Resistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ??????? ?HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC ?ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE801

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE801

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE801

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE801

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

MJE801T

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJE801T

isc Silicon NPN Darlington Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE801STU

Package:TO-225AA,TO-126-3;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS NPN DARL 60V 4A TO126-3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MP801

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIERVOLTAGERANGE-50to1000Volts

DCCOM

Dc Components

晶體管資料

  • 型號:

    MJE801

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    4A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD263,BD677,BD777,FD50B,2N6038,2N6039,

  • 最大耗散功率:

    40W

  • 放大倍數(shù):

    β>750

  • 圖片代號:

    B-10

  • vtest:

    60

  • htest:

    999900

  • atest:

    4

  • wtest:

    40

詳細(xì)參數(shù)

  • 型號:

    MJE801

  • 功能描述:

    達(dá)林頓晶體管

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶體管極性:

    NPN 集電極—發(fā)射極最大電壓

  • VCEO:

    50 V 發(fā)射極 - 基極電壓

  • VEBO:

    集電極—基極電壓

  • 最大直流電集電極電流:

    0.5 A

  • 最大工作溫度:

    + 150 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-18

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
16+
TO-126
10000
全新原裝現(xiàn)貨
詢價
ON
24+
N/A
1230
詢價
ON
24+
TO-126
5000
只做原裝公司現(xiàn)貨
詢價
ON
2020+
TO-126
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
ST/ON
1738+
TO-126
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
詢價
FAIRC
24+
TO-126
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
INFINEON/英飛凌
23+
P-TO263-3-2
69820
終端可以免費供樣,支持BOM配單!
詢價
ON
24+
TO-126
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價
22+
TO126
20000
保證原裝正品,假一陪十
詢價
更多MJE801供應(yīng)商 更新時間2025-1-29 10:00:00