SWITCHMODE? Series

NPN Silicon Power Transistors

The MJE13009 is designed for high?voltage, high?speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

Features

? VCEO(sus) 400 V and 300 V

? Reverse Bias SOA with Inductive Loads @ TC = 100°C

? Inductive Switching Matrix 3 to 12 Amp, 25 and 100°C tc @ 8 A, 100°C is 120 ns (Typ)

? 700 V Blocking Capability

? SOA and Switching Applications Information

? Pb?Free Package is Available*

MJE13009屬于分立半導體產品 > 晶體管 - 雙極性晶體管（BJT）- 單個。安森美半導體公司制造生產的MJE13009晶體管 - 雙極性晶體管（BJT）- 單個分立式雙極結型晶體管 (BJT) 通常在音頻、無線電及其他應用中用于構建模擬信號放大功能。作為大批量生產的第一批半導體器件之一，對于涉及高頻開關和在大電流或高電壓下工作的應用而言，它們的特性相比某些器件類型不占優(yōu)勢，但對于需要以極小的噪聲和失真構建模擬信號的應用而言，它們仍然是首選技術。