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MJD45H11G_ONSEMI/安森美半導(dǎo)體_兩極晶體管 - BJT 8A 80V 20W PNP天芯威商城一部
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
MJD45H11G
- 功能描述:
兩極晶體管 - BJT 8A 80V 20W PNP
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
PNP 集電極—基極電壓
- VCBO:
集電極—發(fā)射極最大電壓
- VCEO:
- 40 V 發(fā)射極 - 基極電壓
- VEBO:
- 6 V
- 增益帶寬產(chǎn)品fT:
直流集電極/Base Gain hfe
- Min:
100 A
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
PowerFLAT 2 x 2
供應(yīng)商
- 企業(yè):
深圳市天芯威科技有限公司
- 商鋪:
- 聯(lián)系人:
雷先生
- 手機(jī):
13726497219
- 詢價:
- 電話:
0755-82574547
- 地址:
深圳市福田區(qū)華強(qiáng)北上步工業(yè)區(qū)304棟西座406室
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