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MJD44H11G_ONSEMI/安森美半導體_兩極晶體管 - BJT 8A 80V 20W NPN海芯未來電子
- 詳細信息
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產品屬性
- 類型
描述
- 型號:
MJD44H11G
- 功能描述:
兩極晶體管 - BJT 8A 80V 20W NPN
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
PNP 集電極—基極電壓
- VCBO:
集電極—發(fā)射極最大電壓
- VCEO:
- 40 V 發(fā)射極 - 基極電壓
- VEBO:
- 6 V
- 增益帶寬產品fT:
直流集電極/Base Gain hfe
- Min:
100 A
- 安裝風格:
SMD/SMT
- 封裝/箱體:
PowerFLAT 2 x 2
供應商
- 企業(yè):
海芯未來半導體電子(深圳)有限公司
- 商鋪:
- 聯(lián)系人:
馮小姐
- 手機:
18823440899
- 詢價:
- 電話:
18823440899
- 地址:
深圳市福田區(qū)華強北街道華航社區(qū)振興路109號華康大院2棟2層203
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