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MJD117

EPITAXIALPLANARPNPTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES ?HighDCCurrentGain.:hFE=1000(Min.),VCE=-4V,IC=-1A. ?LowCollector-EmitterSaturationVoltage. ?StraightLead(IPAK,LSuffix) ?ComplementarytoMJD112/L.

KECKEC CORPORATION

KEC株式會社

MJD117

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Application ■Lin

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD117

ComplementaryDarlingtonPowerTransistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplications

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD117

D-PAKforSurfaceMountApplications

D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications(NoSuffix) ?StraightLead(I-PAK,“-I“Suffix) ?ElectricallySimilartoPopularTIP117

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJD117

ComplementaryDarlingtonPowerTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD117

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD117

ComplementarypowerDarlingtontransistors

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD117

ComplementaryDarlingtonPowerTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD117

TRANSISTOR(PNP)

FS

First Silicon Co., Ltd

MJD117

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●LowCollector-EmitterSaturationVoltage ●ComplementarytoMJD112

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

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