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MJD117G

ComplementaryDarlingtonPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD117G

ComplementaryDarlingtonPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD117G

ComplementaryDarlingtonPowerTransistorsDPAKForSurfaceMountApplications

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD117-I

D-PAKforSurfaceMountApplications

D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications(NoSuffix) ?StraightLead(I-PAK,“-I“Suffix) ?ElectricallySimilartoPopularTIP117

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD117L

EPITAXIALPLANARPNPTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES ?HighDCCurrentGain.:hFE=1000(Min.),VCE=-4V,IC=-1A. ?LowCollector-EmitterSaturationVoltage. ?StraightLead(IPAK,LSuffix) ?ComplementarytoMJD112/L.

KECKEC CORPORATION

KEC株式會(huì)社

MJD117PNP

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications

CDIL

Continental Device India Limited

MJD117RLG

ComplementaryDarlingtonPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD117RLG

ComplementaryDarlingtonPowerTransistorsDPAKForSurfaceMountApplications

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBTRA117SS

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forswitching,interfacecircuitanddrivecircuit applications Features ?Withbuilt-inbiasresistors ?Simplifycircuitdesign ?Reduceaquantityofpartsandmanufacturingprocess

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司

MMBTRA117SS

PNPDigitalTransistor

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

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