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MID122

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlowspeedswitchingapplications.

DCCOM

Dc Components

MJD122

ComplementaryDarlingtonPowerTransistors

Features ?D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications ?ElectricallySimilartoPopularTIP122 ?ComplementtoMJD127

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD122

ComplementaryDarlingtonPowerTransistors

Features ?D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications ?ElectricallySimilartoPopularTIP122 ?ComplementtoMJD127

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD122

SILICONPOWERTRANSISTORS8AMPERES100VOLTS20WATT

Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?StraightLeadVersioninPlasticSleeves(“–1”Suffix) ?LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) ?Sur

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJD122

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD122

ComplementaryDarlingtonPowerTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD122

LowvoltagepowerDarlingtontransistor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD122

SiliconNPNepitaxialplanerTransistors

Features ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?HalogenFreeAvailableUponRequestByAddingSuffix-HF ?MoistureSensitivityLevel1 ?EpoxyMeetsUL94V-0FlammabilityRating ?LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MJD122

TECHNICALSPECIFICATIONSOFNPNDARLINGTONTRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlowspeedswitchingapplications.

DCCOM

Dc Components

MJD122

NPNPLASTICENCAPSULATETRANSISTORS

Features: *HighDCcurrentgain *ElectricallysimilartopopularTIP122 *Built-inadamperdiodeatE-C

WEITRON

Weitron Technology

MJD122

ComplementaryDarlingtonPowerTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD122

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifierandlo

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD122

ComplementaryDarlingtonPowerTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD122

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications

TGS

Tiger Electronic Co.,Ltd

MJD122

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD122

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS

DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications

CDIL

Continental Device India Limited

MJD122

TRANSISTOR(NPN)

TRANSISTOR（NPN） FEATURES ?HighDCCurrentGain ?ElectricallySimilartoPopularTIP122 ?Built-inaDamperDiodeatE-C

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

MJD122

TO-252-2LPlastic-EncapsulateTransistors

TRANSISTOR（NPN） Feature ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP122 ●Built-inaDamperDiodeatE-C

HDSEMIJiangsu High diode Semiconductor Co., Ltd

蘇海德半導(dǎo)體蘇海德半導(dǎo)體有限公司

MJD122

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications

TGS

Tiger Electronic Co.,Ltd

MJD122

SiliconNPNepitaxialplanerTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    MID122

  • 制造商：

    DCCOM

  • 制造商全稱：

    Dc Components

  • 功能描述：

    TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
OptiFuse
23+
6000
誠信服務(wù)，絕對原裝原盤
 詢價
UNI
13+
19728
原裝分銷
 詢價
UNI原裝
1801+
DIP-2
8965
只做原裝現(xiàn)貨、主營光電元器件/門市現(xiàn)貨
 詢價
UNI
24+
DIP-2
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
UNI
2315+
4860
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢價
UNI
23+
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IXYS
22+
Y4M5
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
23+
Y4M5
9000
原裝正品，支持實(shí)單
 詢價
IXYS
23+
MODIGBTRBSOA1200V160AY4-
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
更多MID122供應(yīng)商 更新時間2025-1-8 18:30:00

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