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MJ802

COMPLEMENTARYHIGHPOWERTRANSISTORS

DESCRIPTION TheMJ802(NPN)andMJ4502(PNP)aresiliconepitaxial-basecomplementarypowertransistorsinJedecTO-3metalcase,intendedforgeneralpurposepoweramplifierandswitchingapplications.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJ802

POWERTRANSISTORS(30A,100V,200W)

30AMPEREPOWERTRANSISTORNPNSILICON100VOLTS200WATTS

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJ802

30AMPEREPOWERTRANSISTORNPNSILICON100VOLTS200WATTS

High?PowerNPNSiliconTransistor ???foruseasanoutputdeviceincomplementaryaudioamplifiersto100?Wattsmusicpowerperchannel. Features ?HighDCCurrentGain?hFE=25?100@IC=7.5A ?ExcellentSafeOperatingArea ?ComplementtothePNPMJ4502

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJ802

High-PowerNPNSiliconTransistor

High?PowerNPNSiliconTransistor Thistransistorisforuseasanoutputdeviceincomplementaryaudioamplifiersto100?Wattsmusicpowerperchannel. Features ?HighDCCurrentGain?hFE=25?100@IC=7.5A ?ExcellentSafeOperatingArea ?ComplementtothePNPMJ4502 ?Pb?FreePackag

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ802

NPNPLANARSILICONTRANSISTOR(AUDIOPOWERAMPLIFIERDCTODCCONVERTER)

AUDIOPOWERAMPLIFIERDCTODCCONVERTER ?HighCurrentCapability ?HighPowerDissipation ?ComplementarytoMJ4502

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

MJ802

PowerTransistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

MJ802

iscSiliconNPNPowerTransistor

DESCRIPTION ?HighDCCurrentGain- :hFE=25-100@IC=7.5A ?ExcellentSafeOperatingArea ?ComplementtoTypeMJ4502 APPLICATIONS ?Designedforuseasanoutputdeviceincomplementaryaudioamplifiersto100-Wattsmusicpowerperchannel.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MJ802

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-3package ?ComplementtotypeMJ4502 ?Excellentsafeoperatingarea APPLICATIONS ?Foruseasanoutputdeviceincomplementaryaudioamplifiersto100-Wattsmusicpowerperchannel

SAVANTIC

Savantic, Inc.

MJ802

High??owerNPNSiliconTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ802

SILICONNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJ802

High-PowerNPNSiliconTransistor

High-PowerNPNSiliconTransistor Thistransistorisforuseasanoutputdeviceincomplementaryaudioamplifiersto100-Wattsmusicpowerperchannel. Features ?HighDCCurrentGain-hFE=25-100IC=7.5A ?ExcellentSafeOperatingArea ?ComplementtothePNPMJ4502

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJ802

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

MJ802G

High??owerNPNSiliconTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE802

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ??????? ?HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC ?ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE802

SILICONNPNPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJE802

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE802

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE802

SILICONNPNPOWERDARLINGTONTRANSISTOR

■STMicroelectronicsPREFERRED SALESTYPE ■NPNDARLINGTON APPLICATIONS ■GENERALPURPOSESWITCHING DESCRIPTION TheMJE802isasiliconEpitaxial-BaseNPN transistorinmonolithicDarlingtonconfiguration, mountedinJedecSOT-32plasticpackage.Itis intendedforuseinmediumpower

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJE802

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE802

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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