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MHW803

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

TheRFLine UHFPowerAmplifiers Capableofwidepowerrangecontrolasencounteredinportablecellularradioapplications(30dBtypical). ?MHW803–2806–870MHz ?Specified7.5VoltCharacteristics RFInputPower=1mW(0dBm) RFOutputPower=2Watts MinimumGain(VControl

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MIC803

3-PinMicroprocessorSupervisorCircuitwithOpen-DrainResetOutput

GeneralDescription TheMIC803isasingle-voltagesupervisorwithopen-drainresetoutputthatprovidesaccuratepowersupplymonitoringandresetgenerationinmicroprocessor-basedsystems.Thefunctionofthedeviceistoassertaresetsignalifthepowersupplyvoltagedropsbelowthereset

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MIC803

3-PinMicroprocessorSupervisorCircuitwithOpen-DrainResetOutput

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MIP803

SiliconMOSIC

■Features ●Allowingdownsizingofthesetsthroughthereductionofapartscountresultingfromthevoltagestep-uputilizingacoilinsteadofatransformerandemployingthethinsurfacemountingpackage. ●Allowinglowvoltagedrive(adaptabletoasmallandlow-voltagebattery),orVC

PanasonicPanasonic Semiconductor

松下松下電器

MJE803

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ??????? ?HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC ?ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE803

SILICONNPNPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJE803

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE803

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE803

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE803

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE803

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE803

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE803

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJE803

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MJE803

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

MJE803G

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE803G

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE803T

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJE803T

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?Collector–EmitterBreakdownVoltage—:V(BR)CEO=80V ?DCCurrentGain—:hFE=750(Min)@IC=2A ?ComplementtoTypeMJE703T APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MUR803

8.0AGLASSPASSIVATEDSUPERFASTRECTIFIER

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

詳細(xì)參數(shù)

  • 型號:

    MHW803

  • 制造商:

    MOTOROLA

  • 制造商全稱:

    Motorola, Inc

  • 功能描述:

    2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

供應(yīng)商型號品牌批號封裝庫存備注價格
MOTOROLA/摩托羅拉
23+
1688
房間現(xiàn)貨庫存:QQ:373621633
詢價
MOT
23+
高頻管
220
專營高頻管模塊,全新原裝!
詢價
MOTOROLA/摩托羅拉
24+
150
現(xiàn)貨供應(yīng)
詢價
MOTOROLA/摩托羅拉
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
詢價
MOTOROLA/摩托羅拉
23+
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
原廠
2023+
模塊
600
專營模塊,繼電器,公司原裝現(xiàn)貨
詢價
MOTOROLA
23+
原廠封裝
9526
詢價
摩托羅拉
100
原裝現(xiàn)貨,價格優(yōu)惠
詢價
MOTOROLA
24+
SOP14
2978
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時可發(fā)貨
詢價
MOT
24+
580
詢價
更多MHW803供應(yīng)商 更新時間2024-12-28 10:30:00