MGJ2D241503BSC中文資料村田數(shù)據(jù)手冊PDF規(guī)格書

Optimised bipolar output voltages for IGBT/

SiC & Mosfet gate drives

Reinforced insulation to UL62368-1

recognised

ANSI/AAMI ES60601-1, 1 MOPP/2 MOOP’s

recognition pending

5.4kVDC isolation test voltage ‘Hi Pot Test’

Ultra low isolation capacitance

SIP package style

5V, 12V, 15V & 24V inputs

+15V/-3V, +15V/-5V, +15V/-8.7V,

+15V/-15V, +17V/-9V, +18V/-2.5V,

+18V/-5V3, +20V/-3.5V & +20V/-5V outputs

Operation to 105°C

Characterised CMTI >200kV/uS

Continuous barrier withstand voltage

2.4kVDC

Characterised partial discharge performance