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MGF1304A中文資料三菱電機數(shù)據(jù)手冊PDF規(guī)格書

MGF1304A
廠商型號

MGF1304A

功能描述

FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE

文件大小

488.02 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商 Mitsubishi Electric Semiconductor
企業(yè)簡稱

Mitsubishi三菱電機

中文名稱

三菱電機株式會社官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-27 20:00:00

MGF1304A規(guī)格書詳情

DESCRIPTION

The MGF1304A is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S- to Ku- band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

FEATURES

● Low noise figure NF = 1.7 (MAX.) @ f = 12 GHz

● High associated gain Gs = 8.5 dB (MIN.) @ f = 12 GHz

● High reliability and stability

APPLICATION

S- to Ku- band super-low-noise amplifiers.

產(chǎn)品屬性

  • 型號:

    MGF1304A

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE

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