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MFEV700/HAB,122

包裝:盒 類別:開發(fā)板,套件,編程器 RFID 評估和開發(fā)套件,板 描述:KIT EVAL MIFARE RFID 13.56MHZ

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

MF-R700

PTCResettableFuses

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

MF-R700

Almostanywherethereisalowvoltagepowersupplyandaloadtobeprotected,including

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

MF-R700

MF-RSeries-PTCResettableFuses

Features ■RadialLeadedDevices ■Cured,flameretardantepoxypolymerinsulatingmaterialmeetsUL94V-0requirements ■RoHScompliant*andhalogenfree** ■Agencyrecognition: AdditionalFeatures ■Bulkpackaging,tapeandreelandAmmo-Pakavailableonmostmodels Applications Almosta

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

MF-R700

PTCResettableFuses

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

MF-R700

PTCResettableFuses

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

MF-R700

Almostanywherethereisalowvoltagepowersupplyandaloadtobeprotected,including

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

MF-R700

MF-RSeries-PTCResettableFuses

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

MF-R700

PTCResettableFuses

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

MF-RHT700

HighTemperaturePTCResettableFuses

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

MF-USML700

LowOhmicPTCResettableFuses

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

MJE700

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

Motorola

Motorola, Inc

MJE700

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE700

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBase-EmitterResistors ?HighDCCurrentGain:hFE=750(Min.)@IC=-1.5and-2.0ADC ?ComplementtoMJE800/801/802/803

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJE700

NPN(HIGHDCCURRENTGAIN)

SamsungSamsung semiconductor

三星三星半導體

MJE700

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE700

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?Collector–EmitterBreakdownVoltage— :V(BR)CEO=-60V ?DCCurrentGain— :hFE=750(Min)@IC=-1.5A ?ComplementtoTypeMJE800 APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE700

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美國中央半導體

MJE700

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MJE700G

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    MFEV700/HAB,122

  • 制造商:

    NXP USA Inc.

  • 類別:

    開發(fā)板,套件,編程器 > RFID 評估和開發(fā)套件,板

  • 系列:

    MIFARE?

  • 包裝:

  • 類型:

    RFID 閱讀器

  • 頻率:

    13.56MHz

  • 配套使用/相關產(chǎn)品:

    MFRD700

  • 所含物品:

  • 描述:

    KIT EVAL MIFARE RFID 13.56MHZ

供應商型號品牌批號封裝庫存備注價格
NXP
22+
NA
45000
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24+
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TE/泰科
22+
SMD
518000
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EVEROHMS
21+
標準封裝
5000
進口原裝,訂貨渠道!
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更多MFEV700/HAB供應商 更新時間2024-10-25 10:08:00