首頁(yè) >MCU60P04>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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P-Channel60-V(D-S)MOSFET FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?P-Channel ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
NCEP-ChannelEnhancementModePowerMOSFET Description TheNCE60P04Rusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications.GeneralFeatures ●VDS=-60V,ID=-4.3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
NCEP-ChannelEnhancementModePowerMOSFET Description TheNCE60P04SNusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-4A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
NCEP-ChannelEnhancementModePowerMOSFET Description TheNCE60P04Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-4A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
P-Channel60-V(D-S)MOSFET FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?P-Channel ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
40VP-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@-10V,ID@-20A | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
P-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=-60V,ID=-4A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON |
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