首頁(yè) >MCU50P04A>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
P-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP50P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=10mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=15mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance Ci | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
P-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP50P04SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=9.6mΩMAX.(VGS=?10V,ID=?25A) ?RDS(on)2=15mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
P-Channel40V(D-S)MOSFET FEATURES ?TrenchFET?powerMOSFET ?Packagewithlowthermalresistance ?100RgandUIStested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
40VP-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@-10V,ID@-10A | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
40VP-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@-10V,ID@-10A | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
AutomotiveP-Channel40V(D-S)175?CMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
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