首頁(yè) >MCU12P10A>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
POWERFIELDEFFECTTRANSISTOR PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGate | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
POWERFIELDEFFECTTRANSISTOR PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGate | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSPOWERFET12AMPERES100VOLTSRDS(on)=0.3OHM PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGate | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerMOSFET12Amps,100VoltsP??hannelTO??20 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
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