首頁 >MCP3904-I/SS>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPNGeneralPurposeAmplifier Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR 40VNPNSMALLSIGNALTRANSISTORINSOT23 Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable(MMBT3906) ?IdealforMediumPowerAmplificationandSwitching ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Devic | DIODESDiodes Incorporated 美臺半導(dǎo)體 | DIODES | ||
SmallSignalTransistors(NPN) FEATURES ◆NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ◆Ascomplementarytype,thePNP transistorMMBT3906isrecommended. ◆ThistransistorisalsoavailableintheTO-92 casewiththetypedesignation2N3904. | GE GE Industrial Company | GE | ||
NPNGeneralPurposeAmplifier Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?Capableof350mWattsofPowerDissipationand200mAIc. ?OperatingandStorageJunctionTemperatures:-55°Cto150°C ?SurfaceMountSOT-23Package ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable (MMBT3906) ?IdealforMediumPowerAmplificationand Switching | TRSYS Transys Electronics | TRSYS | ||
GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor NPNSilicon | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | ZOWIE | ||
GENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT GeneralPurposeTransistors NPNandPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT?323/SC?70packagewhichisdesignedforlowpowersurfacemountapplications. Features ?AEC?Q101QualifiedandPPAPCapable ?SPrefixforAut | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
NPNSiliconSwitchingTransistor NPNSiliconSwitchingTransistors ?HighDCcurrentgain:0.1mAto100mA ?Lowcollector-emittersaturationvoltage ?ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage ?Complementarytypes:SMBT3906...MMBT3906 ?SMBT3904S:Fororientat | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
GENERALPURPOSEAPPLIATION GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906 | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC |
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