MC-4516CD641ES-A10中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

Description

The MC-4516CD641ES and MC-4516CD641PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: μPD45128163 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

? 16,777,216 words by 64 bits organization

? Clock frequency and access time from CLK

? Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

? Pulsed interface

? Possible to assert random column address in every cycle

? Quad internal banks controlled by BA0, BA1 (Bank Select)

? Programmable burst-length (1, 2, 4, 8 and Full Page)

? Programmable wrap sequence (Sequential / Interleave)

? Programmable /CAS latency (2, 3)

? Automatic precharge and controlled precharge

? CBR (Auto) refresh and self refresh

? Single 3.3V ±0.3V power supply

? LVTTL compatible

? 4,096 refresh cycles/64 ms

? Burst termination by Burst Stop command and Precharge command

? 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)

? Unbuffered type

? Serial PD

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.