These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Features

? Small Compact Surface Mountable Package with J-Bend Leads

? Rectangular Package for Automated Handling

? Highly Stable Oxide Passivated Junction

? Very Low Forward Voltage Drop

(0.5 V Max @ 3.0 A, TJ = 25°C)

? Excellent Ability to Withstand Reverse Avalanche Energy Transients

? Guard-Ring for Stress Protection

? Device Passes ISO 7637 Pulse #1

? SBRS8 and NRVB Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC?Q101 Qualified and PPAP Capable*

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant

MBRS340T3G屬于分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單。安森美半導(dǎo)體公司制造生產(chǎn)的MBRS340T3G二極管 - 整流器 - 單單整流器二極管系列產(chǎn)品可用于讓電流僅沿一個方向流動，并且每個器件封裝都恰好實現(xiàn)該功能的一個實例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨列在各自的產(chǎn)品系列中，每個器件封裝中包含多個二極管的產(chǎn)品也是如此。