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MBRAF3200T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRAF3200T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRAF3200T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRAF3200T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRAF3200T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS3200T3

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS3200T3D

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS3200T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS3200T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS3200T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS3200T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBAF3200T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBAF3200T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBAF3200T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBAF3200T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS3200T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS3200T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS3200T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

TISP3200T3

OvervoltageProtectorSeries

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

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更多MBRS3200T3G-CUTTAPE供應(yīng)商 更新時(shí)間2024-10-30 10:59:00