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LMBR130T3G

SurfaceMountSchottkyPowerRectifierPb-Freepackageisavailable

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

MBR130T3

SCHOTTKYBARRIERRECTIFIER1.0AMPERES30VOLTS

SurfaceMountSchottkyPowerRectifier PlasticSOD?123Package ThisdeviceusestheSchottkyBarrierprinciplewithalargeareametal?to?siliconpowerdiode.Ideallysuitedforlowvoltage,highfrequencyrectificationorasfreewheelingandpolarityprotectiondiodesinsurfacemountapplicat

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBR130T3

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBR130T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBR130T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBRA130T3

CHIPSCHOTTKYBARRIERDIODES

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. ?Forsurfacemountedapplications. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Lowleakagecurrent.

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯電子深圳市泰迪斯電子科技有限公司

MBRA130T3

ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype

Siliconepitaxialplanertype Features ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. ?Forsurfacemountedapplications. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Lowleakagecurrent.

FORMOSAFormosa MS

美麗微半導體美麗微半導體股份有限公司

MBRS130T3

1AmpSchottkyRectifier

1AmpSchottkyRectifier ?UnderwritersLaboratoryFlammabilityClass94V-0 ?SchottkyBarrierRectifier ?Guardringprotection ?Lowforwardvoltage ?Lowthermalresistancerating

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MBRS130T3

SurfaceMountSchottkyPowerRectifier

SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyre

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBRS130T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBRS130T3G

SurfaceMounthottkyPowerRectifier

SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyre

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBRS130T3G

SurfaceMountSchottkyPowerRectifier

SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyre

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MURA130T3

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MURA130T3

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MURA130T3G

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MURA130T3G

PowerRectifier,Ultra-FastRecovery,1A,300-400V

Ideallysuitedforhighvoltage,highfrequencyrectification,oras freewheelingandprotectiondiodesinsurfacemountapplications wherecompactsizeandweightarecriticaltothesystem. Features ?SmallCompactSurfaceMountablePackagewithJ?BendLeads ?RectangularPackageforAutom

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MURA130T3G

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MURA130T3G

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NRVB130T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NRVBS130T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導體安森美半導體公司

詳細參數(shù)

  • 型號:

    MBRS130T3G-CUT TAPE

  • 制造商:

    ON

  • 功能描述:

    MBRS Series 1 A 30 V Surface Mount Schottky Power Rectifier - DO-214AA

供應商型號品牌批號封裝庫存備注價格
ON新貨
23+
SMB
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ON/安森美
22+
DO-214AA
50000
原裝正品.假一罰十
詢價
ON/安森美
2018+
21244
詢價
ON/安森美
2022+
21244
原廠原裝,假一罰十
詢價
ON/安森美
2122+
SMB
28920
全新原裝正品現(xiàn)貨,優(yōu)勢渠道可含稅,假一賠十
詢價
ON/安森美
21+
DO-214
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
ON/安森美
NA
275000
一級代理原裝正品,價格優(yōu)勢,長期供應!
詢價
ON/安森美
22+
DO-214AASMB
72500
鄭重承諾只做原裝進口貨
詢價
ON/安森美
23+
12000
詢價
ON/安森美
23+
SMB
6000
新財合只做原裝現(xiàn)貨
詢價
更多MBRS130T3G-CUT TAPE供應商 更新時間2024-10-30 13:43:00