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MBM29BS32LF18中文資料飛索數(shù)據(jù)手冊(cè)PDF規(guī)格書

MBM29BS32LF18
廠商型號(hào)

MBM29BS32LF18

功能描述

BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT

文件大小

314.15 Kbytes

頁(yè)面數(shù)量

60 頁(yè)

生產(chǎn)廠商 SPANSION
企業(yè)簡(jiǎn)稱

spansion飛索

中文名稱

飛索半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-4-22 22:50:00

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MBM29BS32LF18規(guī)格書詳情

■ GENERAL DESCRIPTION

The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8V VCC supply.

■ FEATURES

? 0.17 μm process technology

? Single 1.8 volt read, program and erase (1.65 V to 1.95 V)

? Simultaneous Read/Write operation (Dual Bank)

? All Sectors Being Protected Upon Power-up

The device aims for high-speed read of stored codes, thus to fully prevent it from much anticipated wrong

operational procedures, programming and erasure, it adopts All-Sectors Lock for ultimate all sector protection

by default upon power-up.

? FlexBankTM *1

Bank A: 8M bit (8K words × 4 and 32K words × 15)

Bank B: 8M bit (32K words × 16)

Bank C: 8M bit (32K words × 16)

Bank D: 8M bit (8K words × 4 and 32K words × 15)

? Enhanced I/OTM *2 (VCCQ) Feature

Input/ Output voltage generated on the device is determined based on the VI/O level

(MBM29BS32LF: 1.8V VCCQ and MBM29BT32LF: 3.0V VCCQ)

? High Performance Burst frequency reach at 54MHz

Burst access times of 13.5 ns @ 30 pF at industrial temperature range

Asynchronous random access times of 70 ns (at 30 pF)

Synchronous latency of 106 ns with 1.8 V VCCQ, and 106.5 ns with 3.0 V VCCQ (at 30 pF)

? Programmable Burst Read Interface

Linear Burst: 8, 16, and 32 words with wrap-around

? Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

? Minimum 100,000 program/erase cycles

? Sector Erase Architecture

Eight 8K words, sixty-two 32K words sectors.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

? Write Protect Pin (WP)

At VIL, allows protection of “outermost” 2 × 8K words on low end of boot sectors(SA0 and SA1), regardless of

sector protection/unprotection status

? Accelerate Pin (ACC)

At VACC, increases program performance.

At VIL, hardware protect method to lock all sectors.

? Embedded EraseTM *2 Algorithms

Automatically preprograms and erases the chip or any sector

? Embedded ProgramTM *2 Algorithms

Automatically writes and verifies data at specified address

? Data Polling and Toggle Bit feature for detection of program or erase cycle completion

? Automatic sleep mode

When address remain stable, the device automatically switches itself to low power mode

? Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

? In accordance with CFI (Common Flash Interface)

? Hardware reset pin (RESET)

Hardware method to reset the device for reading array data

To avoid initiation of a write cycle during Vcc power-up/down, Reset must be VIL for defined time.

? Protection

Software command sector locking

WP protects the outermost two boot sectors(SA0 and SA1)

ACC protects all sector at VIL. Should be at VIH for all other conditions.

? CMOS compatible inputs, CMOS compatible outputs

產(chǎn)品屬性

  • 型號(hào):

    MBM29BS32LF18

  • 制造商:

    SPANSION

  • 制造商全稱:

    SPANSION

  • 功能描述:

    BURST MODE FLASH MEMORY CMOS 32M(2M X 16) BIT

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