首頁 >MAX581JCSA>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
NPNSILICONRFTRANSISTOR DESCRIPTION: TheMRF581isDesignedforHighcurrentlowPowerAmplifierApplicationsupto1.0GHz. FEATURES: ?LowNoiseFigure ?LowIntermodulationDistortion ?HighGain ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | ADPOW Advanced Power Technology | ADPOW | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | ADPOW Advanced Power Technology | ADPOW | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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