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MJD253

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowCollector?EmitterSaturationVoltage,HighCurrent?Gain. Applications Lowpoweraudioamplifier,Lowcurrent,highspeedswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

MJD253

iscSiliconPNPPowerTransistor

DESCRIPTION ?HighDCCurrentGain- :hFE=40(Min)@IC=-0.2A ?LowCollectorSaturationVoltage- :VCE(sat)=-0.3V(Max.)@IC=-0.5A ?ComplementtotheNPNMJD243 ?MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICATIONS ?Designedfo

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD253

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-0.3V(Max)@IC=-0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD253

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-0.3V(Max)@IC=-0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE253

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION Thecentralsemiconductormje240,mje250seriestypesarecomplementarysiliconpowertransistorsdesignedforaudioamplifierandswitchingapplications.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MJE253

4AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON100VOLTS15WATTS

ComplementarySiliconPowerPlasticTransistors ...designedforlowpoweraudioamplifierandlow–current,high–speedswitchingapplications. ?HighCollector–EmitterSustainingVoltage— VCEO(sus)=100Vdc(Min)—MJE243,MJE253 ?HighDCCurrentGain@IC=200mAdc

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE253

POWERTRANSISTORSCOMPLEMENTARYSILICON

Thesedevicesaredesignedforlowpoweraudioamplifierandlow?current,high?speedswitchingapplications. Features ?HighCollector?EmitterSustainingVoltage? VCEO(sus)=100Vdc(Min) ?HighDCCurrentGain@IC=200mAdc hFE=40?200

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE253

ComplementarySiliconPowerPlasticTransistors100VOLTS,15WATTS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE253

iscSiliconPNPPowerTransistor

DESCRIPTION ?Collector–EmitterSustainingVoltage-:VCEO(SUS)=-100V(Min) ?DCCurrentGain-:hFE=40(Min)@IC=-0.2A ?LowCollectorSaturationVoltage-:VCE(sat)=-0.3V(Max.)@IC=-0.5A ?ComplementtoTypeMJE243 APPLICATIONS ?Designedforlowpoweraudioamplifierandlow-cur

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE253

ComplementarySiliconPowerPlasticTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MAX253MSA/PR-T

  • 功能描述：

    功率驅(qū)動(dòng)器IC 1W Primary-Side Transformer H-Bridge Driver for Isolated Supplies

  • RoHS：

    否

  • 制造商：

    Micrel

  • 產(chǎn)品：

    MOSFET Gate Drivers

  • 類型：

    Low Cost High or Low Side MOSFET Driver

  • 電源電壓-最大：

    30 V

  • 電源電壓-最?。?/span>

    2.75 V

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOIC-8

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MAXIM
22+
DIP-8
8200
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢
 詢價(jià)
24+
N/A
48000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
MAXIM(美信)
2447
TQFN-12(3x3)
315000
2500個(gè)/托盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價(jià)
ADI(亞德諾)/MAXIM(美信)
24+
QFN12EP(3x3)
7350
原裝進(jìn)口,原廠直銷!當(dāng)天可交貨,支持原型號(hào)開票!
 詢價(jià)
MAXIM/美信
22+
12-TQFN
12000
只做原裝,BOM配單,假一罰十
 詢價(jià)
1001
原裝現(xiàn)貨
 詢價(jià)
Analog Devices Inc./Maxim Inte
23+
12-WFQFN
4500
原裝正品 正規(guī)報(bào)關(guān) 可開增值稅票
 詢價(jià)
ADI(亞德諾)/MAXIM(美信)
23+
QFN-12-EP(3x3)
7087
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
Analog Devices Inc./Maxim Inte
25+
12-WFQFN 裸露焊盤
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
MAXIM(美信)
2024+
TQFN-12-EP(3x3)
500000
誠信服務(wù),絕對(duì)原裝原盤
 詢價(jià)
更多MAX253MSA/PR-T供應(yīng)商 更新時(shí)間2025-4-26 16:10:00

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