M58BF008B100ZA6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The M58BF008 is a family of 8 Mbit non-volatile Flash memories that can be erased electrically at the block level and programmed in-system. Family members are configured during product testing for a specific Synchronous or Asynchronous Write mode, a Burst default of Wrap or No-wrap and for Critical Word X = 3 or 4 and Burst Word Y = 1 or 2 latency times. The Main memory array matrix allows each of the 32 equal blocks of 256 Kbit to be erased separately and re-programmed without affecting other blocks. The memory features a 256 Kbit Overlay block having the same address space asthe first Main memory block. The Overlay block provides a secure storage area that is controlled by special Instructions and an external input. A separate supply VDDQ allows the Input/ Output signals to be at 3.3V levels, while the main supply VDD is 5V.

■ SUPPLY VOLTAGE

– VDD = 5V Supply Voltage

– VDDQ = 3.3V Input/Output Supply Voltage

– Optional VPP = 12V for fast Program and Erase

■ CONFIGURABLE OPTIONS

– Synchronous or Asynchronous write mode

– Burst Wrap/No-wrap default

– Critical Word X (3 or 4) and Burst Word Y (1 or 2) latency times

■ ACCESS TIME

– Synchronous X-Y-Y-Y Burst Read up to 40MHz

– Asynchronous Read: 100ns

■ PROGRAMMING TIME: 10μs typical

■ MEMORY BLOCKS

– 32 equal Main blocks of 256 Kbit

– One Overlay block of 256 Kbit

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: F0h

– Version Code: 0-7h