M50FLW080ANB5G集成電路（IC）的存儲器規(guī)格書PDF中文資料

Summary description

The M50FLW080 is a 8 Mbit (1M x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing on production lines, an optional 12V power supply can be used to reduce the erasing and programming time.

Feature summary

■ Flash memory

– Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1) used in PC BIOS applications

– 5-signal communication interface supporting Read and Write operations

– 5 additional general-purpose inputs for platform design flexibility

– Synchronized with 33 MHz PCI clock

■ 16 blocks of 64 Kbytes

– 13 blocks of 64 Kbytes each

– 3 blocks, subdivided into 16 uniform sectors of 4 Kbytes each

Two blocks at the top and one at the bottom (M50FLW080A)

One block at the top and two at the bottom (M50FLW080B)

■ Enhanced security

– Hardware Write Protect pins for block protection

– Register-based Read and Write Protection

– Individual Lock Register for each 4 KByte sector

■ Supply voltage

– VCC = 3.0 to 3.6 V for Program, Erase and Read operations

– VPP = 12 V for Fast Program and Erase

■ Two interfaces

– Auto Detection of Firmware Hub (FWH) or Low Pin Count (LPC) memory cycles for embedded operation with PC chipsets

– Address/Address Multiplexed (A/A Mux) interface for programming equipment compatibility.

■ Programming time: 10 μs typical

■ Program/Erase Controller

– Embedded Program and Erase algorithms

– Status Register bits

■ Program/Erase Suspend

– Read other Blocks/Sectors during Program Suspend

– Program other Blocks/Sectors during Erase Suspend

■ ELectronic signature

– Manufacturer Code: 20h

– Device Code (M50FLW080A): 80h

– Device Code (M50FLW080B): 81h

■ Packages

– ECOPACK? (RoHS compliant)