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M45PE10-VMN6G

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M45PE10-VMN6G

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

NUMONYX

numonyx

M45PE10-VMN6G

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M45PE10-VMN6P

1Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M45PE10-VMN6P

1Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda25MHzSPIBusInterface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M45PE10-VMN6P

1-Mbit,page-erasableserialflashmemorywithbyte-alterabilityand75MHzSPIbusinterface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

NUMONYX

numonyx

M45PE10-VMN6T

1Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda25MHzSPIBusInterface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M45PE10-VMN6TG

1-Mbit,page-erasableserialflashmemorywithbyte-alterabilityand75MHzSPIbusinterface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

NUMONYX

numonyx

M45PE10-VMN6TG

1Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda25MHzSPIBusInterface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M45PE10-VMN6TG

1Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M45PE10-VMN6TP

1-Mbit,page-erasableserialflashmemorywithbyte-alterabilityand75MHzSPIbusinterface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

NUMONYX

numonyx

M45PE10-VMN6TP

1Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M45PE10-VMN6TP

1Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda25MHzSPIBusInterface

Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    M45PE10-VMN6G

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

供應商型號品牌批號封裝庫存備注價格
Micron
17+
SOP-8
6200
詢價
ST/Numonyx
22+
SOP-8
10000
原裝正品優(yōu)勢現(xiàn)貨供應
 詢價
ST
22+
SOP-8
2500
強調(diào)現(xiàn)貨,隨時查詢!
 詢價
ST
24+
SOP8
1769
詢價
Micron
22+
8SO
9000
原廠渠道,現(xiàn)貨配單
 詢價
ST/意法
22+
SOP-8
50000
只做原裝正品,假一罰十,歡迎咨詢
 詢價
ST
23+
SOP-8
16900
正規(guī)渠道,只有原裝!
 詢價
ST
SOP-8
36900
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
22+
SOP-8
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢價
Micron
23+
8SO
8000
只做原裝現(xiàn)貨
 詢價
更多M45PE10-VMN6G供應商 更新時間2025-1-18 8:30:00

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