M36W432集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

M36W432屬于集成電路（IC）的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M36W432存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

The M36W432TG is a low voltage Multiple Memory Product which combines two memory devices; a 32 Mbit boot block Flash memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and SRAM devices to be active at the same time.

FEATURES SUMMARY

■ MULTIPLE MEMORY PRODUCT

– 32 Mbit (2Mb x 16), Boot Block, Flash Memory

– 4 Mbit (256Kb x 16) SRAM Memory

■ SUPPLY VOLTAGE

– VDDF = 2.7V to 3.3V

– VDDS = VDDQF = 2.7V to 3.3V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIME: 70ns, 85ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W432TG: 88BAh

– Bottom Device Code, M36W432BG: 88BBh

FLASH MEMORY

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom Location)

– Main Blocks

■ PROGRAMMING TIME

– 10μs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ AUTOMATIC STANDBY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ COMMON FLASH INTERFACE

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device identifier

SRAM

■ 4 Mbit (256Kb x 16)

■ ACCESS TIME: 70ns

■ LOW VDDS DATA RETENTION: 1.5V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS