M29W800AB120M1T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

DESCRIPTION

The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

FEATURES SUMMARY

■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 80ns

■ PROGRAMMING TIME: 10μs typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

■ SECURITY PROTECTION MEMORY AREA

■ INSTRUCTION ADDRESS CODING: 3 digits

■ MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M29W800AT: D7h

– Bottom Device Code, M29W800AB: 5Bh