M29F800AB70N3T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

SUMMARY DESCRIPTION

The M29F800A is an 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■ SINGLE 5V±10 SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 70ns

■ PROGRAMMING TIME

– 8μs per Byte/Word typical

■ 19 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 16 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29F800AT: 00ECh

– Bottom Device Code M29F800AB: 0058h