M29F400T-120M3R中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. The device

can also be programmed in standard program mers.

M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB

5V±10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

FAST ACCESS TIME: 55ns

FAST PROGRAMMING TIME

–10μs by Byte / 16μs by Word typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

100,000 PROGRAM/ERASE CYCLES per BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code, M29F400T: 00D5h

– Device Code, M29F400B: 00D6h