M29DW128F70NF6T中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

Features summary

■ Supply Voltage

– VCC = 2.7V to 3.6V for Program, Erase and

Read

– VCCQ= 1.65V to 3.6V for Input/Output

– VPP =12V for Fast Program (optional)

■ ASYNCHRONOUS RANDOM/PAGE READ

– Page Width: 8 Words

– Page Access: 25, 30ns

– Random Access: 60, 70ns

■ PROGRAMMING TIME

– 10μs per Byte/Word typical

– 4 Words / 8 Bytes Program

– 32-Word Write Buffer

■ ERASE VERIFY

■ MEMORY BLOCKS

– Quadruple Bank Memory Array:

16Mbit+48Mbit+48Mbit+16Mbit

– Parameter Blocks (at Top and Bottom)

■ DUAL OPERATIONS

– While Program or Erase in one bank, Read

in any of the other banks

■ PROGRAM/ ERASE SUSPEND and RESUME

MODES

– Read from any Block during Program

Suspend

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM

– Faster Production/Batch Programming

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ HARDWARE BLOCK PROTECTION

– VPP/WP Pin for fast program and write

protect of the four outermost parameter

blocks

■ SECURITY FEATURES

– Standard Protection

– Password Protection

■ EXTENDED MEMORY BLOCK

– Extra block used as security block or to

store additional information

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code: 227Eh + 2220h + 2200h

■ ECOPACK? PACKAGES AVAILABLE