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M29DW128F60ZA1T

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60ZA1T

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60ZA1T

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

NUMONYX

numonyx

M29DW128F60ZA1

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

NUMONYX

numonyx

M29DW128F60ZA1

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60ZA1

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60ZA1E

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60ZA1E

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60ZA1E

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

NUMONYX

numonyx

M29DW128F60ZA1F

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    M29DW128F60ZA1T

  • 制造商：

    NUMONYX

  • 制造商全稱：

    Numonyx B.V

  • 功能描述：

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

供應商型號品牌批號封裝庫存備注價格
ST
16+
BGA
2500
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
ST
2023+
BGA
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
ST
24+
BGA
35200
一級代理/放心采購
 詢價
ST
22
BGA
25000
3月31原裝,微信報價
 詢價
ST
BGA
893993
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
24+
BGA
6500
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
ST
25+
BGA
25000
全新原裝現(xiàn)貨 假一賠十
 詢價
MICRON
1844+
BGA
6528
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
Micron Technology Inc.
21+
60-TFBGA
5280
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營
 詢價
NUYX
24+
64TBGA
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
更多M29DW128F60ZA1T供應商 更新時間2025-2-10 15:25:00

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