首頁(yè)>M28F101-150XN6>規(guī)格書(shū)詳情

M28F101-150XN6中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

M28F101-150XN6
廠商型號(hào)

M28F101-150XN6

功能描述

1 Mb 128K x 8, Chip Erase FLASH MEMORY

文件大小

197.89 Kbytes

頁(yè)面數(shù)量

23 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-27 15:38:00

M28F101-150XN6規(guī)格書(shū)詳情

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

Features

? 5V±10 SUPPLY VOLTAGE

? 12V PROGRAMMING VOLTAGE

? FAST ACCESS TIME: 70ns

? BYTE PROGRAMING TIME: 10μs typical

? ELECTRICAL CHIP ERASE in 1s RANGE

? LOW POWER CONSUMPTION

– Stand-by Current: 100μA max

? 10,000 ERASE/PROGRAM CYCLES

? INTEGRATED ERASE/PROGRAM-STOP TIMER

? OTP COMPATIBLE PACKAGES and PINOUTS

? ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 07h

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST
DIP
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
ST
22+
PLCC
10000
原裝正品優(yōu)勢(shì)現(xiàn)貨供應(yīng)
詢價(jià)
ST
2021+
PLCC
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
ST
2022
PLCC
2400
原裝現(xiàn)貨
詢價(jià)
ST
22+
原廠原封
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
詢價(jià)
ST
2339+
PLCC
5632
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢價(jià)
24+
3000
公司存貨
詢價(jià)
ST
23+
PLCC-32
9526
詢價(jià)
ST
24+
PLCC
15
原裝現(xiàn)貨假一罰十
詢價(jià)
ST/意法
23+
PLCC
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)