首頁>M28F101-100XK6>規(guī)格書詳情

M28F101-100XK6中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

M28F101-100XK6
廠商型號

M28F101-100XK6

功能描述

1 Mb 128K x 8, Chip Erase FLASH MEMORY

文件大小

197.89 Kbytes

頁面數(shù)量

23

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-25 17:10:00

M28F101-100XK6規(guī)格書詳情

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

Features

? 5V±10 SUPPLY VOLTAGE

? 12V PROGRAMMING VOLTAGE

? FAST ACCESS TIME: 70ns

? BYTE PROGRAMING TIME: 10μs typical

? ELECTRICAL CHIP ERASE in 1s RANGE

? LOW POWER CONSUMPTION

– Stand-by Current: 100μA max

? 10,000 ERASE/PROGRAM CYCLES

? INTEGRATED ERASE/PROGRAM-STOP TIMER

? OTP COMPATIBLE PACKAGES and PINOUTS

? ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 07h

產(chǎn)品屬性

  • 型號:

    M28F101-100XK6

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    1 Mb 128K x 8, Chip Erase FLASH MEMORY

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
ST/意法
24+
PLCC
990000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
ST
PLCC
399000
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
STM
23+
NA
685
專做原裝正品,假一罰百!
詢價(jià)
ST
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
詢價(jià)
ST
23+
PLCC-32
16900
正規(guī)渠道,只有原裝!
詢價(jià)
STM
9916/9727
17
公司優(yōu)勢庫存 熱賣中!
詢價(jià)
ST
24+
9850
公司原裝現(xiàn)貨/隨時(shí)可以發(fā)貨
詢價(jià)
ST/意法
22+
PLCC32
9000
原裝正品
詢價(jià)
24+
237
本站現(xiàn)庫存
詢價(jià)
ST/意法
24+
PLCC
60
原裝現(xiàn)貨假一賠十
詢價(jià)