M25P10-VMN6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The M25P10 is an 1 Mbit Paged Flash Memory fabricated with STMicroelectronics High Endurance CMOS technology. The memory is accessed by a simple SPI bus compatible serial interface. The bus signals are a serial clock input (C), a serial data input (D) and a serial data output (Q).

The device connected to the bus is selected when the chip select input (S) goes low. Data is clocked in during the low to high transition of clock C, data is clocked out during the high to low transition of clock C

■ 1 Mbit PAGED Flash Memory

■ 128 BYTE PAGE PROGRAM IN 3 ms TYPICAL

■ 256 Kbit SECTOR ERASE IN 1 s TYPICAL

■ BULK ERASE IN 2 s TYPICAL

■ SINGLE 2.7 V to 3.6 V SUPPLY VOLTAGE

■ SPI BUS COMPATIBLE SERIAL INTERFACE

■ 20 MHz CLOCK RATE AVAILABLE

■ SUPPORTS POSITIVE CLOCK SPI MODES

■ DEEP POWER DOWN MODE (1 μA TYPICAL)

■ ELECTRONIC SIGNATURE

■ 10,000 ERASE/PROG CYCLES PER SECTOR

■ 20 YEARS DATA RETENTION

■ –40 TO 85°C TEMPERATURE RANGE