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M25P10-AVMN6TP TR

包裝:托盤 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 類別:集成電路(IC) 存儲器 描述:IC FLASH 1MBIT SPI 50MHZ 8SO

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

M25P10-AVMN6

1Mbit,LowVoltage,SerialFlashMemoryWith25MHzSPIBusInterface

Summarydescription TheM25P10-Aisa1Mbit(128Kx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,e

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6

512Kbitto32Mbit,LowVoltage,SerialFlashMemoryWith40MHzor50MHzSPIBusInterface

SUMMARYDESCRIPTION TheM25Pxxisa512Kbitto32Mbit(2Mx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■512Kbitto32MbitofFlashMemory ■PageProgram(upto256Bytes)in1.4ms(typical) ■SectorErase(2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6

1Mbit,lowvoltage,SerialFlashmemorywith50MHzSPIbusinterface

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6/X

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYX

numonyx

M25P10-AVMN6/Y

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYX

numonyx

M25P10-AVMN6G

512Kbitto32Mbit,LowVoltage,SerialFlashMemoryWith40MHzor50MHzSPIBusInterface

SUMMARYDESCRIPTION TheM25Pxxisa512Kbitto32Mbit(2Mx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■512Kbitto32MbitofFlashMemory ■PageProgram(upto256Bytes)in1.4ms(typical) ■SectorErase(2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6G

1Mbit,LowVoltage,SerialFlashMemoryWith25MHzSPIBusInterface

Summarydescription TheM25P10-Aisa1Mbit(128Kx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,e

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6G/X

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYX

numonyx

M25P10-AVMN6G/Y

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYX

numonyx

M25P10-AVMN6P

512Kbitto32Mbit,LowVoltage,SerialFlashMemoryWith40MHzor50MHzSPIBusInterface

SUMMARYDESCRIPTION TheM25Pxxisa512Kbitto32Mbit(2Mx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■512Kbitto32MbitofFlashMemory ■PageProgram(upto256Bytes)in1.4ms(typical) ■SectorErase(2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6P

1Mbit,lowvoltage,SerialFlashmemorywith50MHzSPIbusinterface

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6P

1Mbit,LowVoltage,SerialFlashMemoryWith25MHzSPIBusInterface

Summarydescription TheM25P10-Aisa1Mbit(128Kx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,e

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6P/X

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYX

numonyx

M25P10-AVMN6P/Y

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYX

numonyx

M25P10-AVMN6T

1Mbit,LowVoltage,SerialFlashMemoryWith25MHzSPIBusInterface

Summarydescription TheM25P10-Aisa1Mbit(128Kx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,e

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6T

512Kbit,LowVoltage,SerialFlashMemoryWith25MHzSPIBusInterface

SUMMARYDESCRIPTION TheM25Pxxisa512Kbitto32Mbit(2Mx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■512Kbitto32MbitofFlashMemory ■PageProgram(upto256Bytes)in1.4ms(typical) ■SectorErase(2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6T

512Kbitto32Mbit,LowVoltage,SerialFlashMemoryWith40MHzor50MHzSPIBusInterface

SUMMARYDESCRIPTION TheM25Pxxisa512Kbitto32Mbit(2Mx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■512Kbitto32MbitofFlashMemory ■PageProgram(upto256Bytes)in1.4ms(typical) ■SectorErase(2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6T

1Mbit,lowvoltage,SerialFlashmemorywith50MHzSPIbusinterface

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M25P10-AVMN6T/X

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYX

numonyx

產品屬性

  • 產品編號:

    M25P10-AVMN6TP TR

  • 制造商:

    Micron Technology Inc.

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    非易失

  • 存儲器格式:

    閃存

  • 技術:

    FLASH - NOR

  • 存儲容量:

    1Mb(128K x 8)

  • 存儲器接口:

    SPI

  • 寫周期時間 - 字,頁:

    15ms,5ms

  • 電壓 - 供電:

    2.3V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    8-SOIC(0.154",3.90mm 寬)

  • 供應商器件封裝:

    8-SO

  • 描述:

    IC FLASH 1MBIT SPI 50MHZ 8SO

供應商型號品牌批號封裝庫存備注價格
ST
SOP8
93480
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
STMICROEL
23+
NA
1358
專做原裝正品,假一罰百!
詢價
STS
1535+
208
詢價
STS
23+
208
全新原裝,歡迎來電咨詢
詢價
ST
23+
N/A
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
詢價
ST
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
ST/意法
2046+
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
ST
9846
15
優(yōu)勢貨源原裝正品
詢價
ST/意法
23+
SOP-8
7610
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
MICRON/美光
22+
SO-8
18000
原裝正品
詢價
更多M25P10-AVMN6TP TR供應商 更新時間2024-11-18 10:36:00