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MJ802

High??owerNPNSiliconTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJ802

SILICONNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJ802

High-PowerNPNSiliconTransistor

High-PowerNPNSiliconTransistor Thistransistorisforuseasanoutputdeviceincomplementaryaudioamplifiersto100-Wattsmusicpowerperchannel. Features ?HighDCCurrentGain-hFE=25-100IC=7.5A ?ExcellentSafeOperatingArea ?ComplementtothePNPMJ4502

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MJ802

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

MJ802G

High??owerNPNSiliconTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJ802G

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=90V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.8V(Max)@IC=7.5A APPLICATIONS ·Designedforuseasanoutputdeviceincomplementary audioamplifiersto100-Wattsmusicpowerperchannel.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE802

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ??????? ?HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC ?ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJE802

SILICONNPNPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJE802

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE802

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

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1059
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1998
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1059
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3880
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MOTOROLA
24+
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37500
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LUCENT
05+
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81
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N/A
2447
SMD
100500
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LUCENT
0018+
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B&F
22+
NA
11029
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24+
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5000
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MAXIM
19+
SMD20
256800
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更多M-FW802-DB供應商 更新時間2025-5-22 15:30:00