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LTC7891RUFDMTRPBF中文資料亞德諾數(shù)據(jù)手冊(cè)PDF規(guī)格書

LTC7891RUFDMTRPBF
廠商型號(hào)

LTC7891RUFDMTRPBF

功能描述

100 V, Low IQ, Synchronous Step-Down Controller for GaN FETs

文件大小

1.75578 Mbytes

頁(yè)面數(shù)量

36 頁(yè)

生產(chǎn)廠商 Analog Devices
企業(yè)簡(jiǎn)稱

AD亞德諾

中文名稱

亞德諾半導(dǎo)體技術(shù)有限公司官網(wǎng)

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數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-12-29 9:30:00

LTC7891RUFDMTRPBF規(guī)格書詳情

GENERAL DESCRIPTION

The LTC7891 is a high performance, step-down, dc-to-dc switching

regulator controller that drives all N-channel synchronous gallium

nitride (GaN) field effect transistor (FET) power stages from input

voltages up to 100 V. The LTC7891 solves many of the challenges

traditionally faced when using GaN FETs. The LTC7891 simplifies

the application design while requiring no protection diodes and no

other additional external components compared to a silicon metaloxide

semiconductor field effect transistor (MOSFET) solution.

The internal smart bootstrap switch prevents overcharging of the

BOOST pin to SW pin high-side driver supplies during dead times,

protecting the gate of the top GaN FET. The LTC7891 internally

optimizes the gate driver timing on both switching edges to achieve

smart near zero dead times, significantly improving efficiency and

allowing for high frequency operation, even at high input voltages.

Alternatively, the user can adjust the dead times with external

resistors for margin or to tailor the application.

The gate drive voltage of the LTC7891 can be precisely adjusted

from 4 V to 5.5 V to optimize performance, and to allow the use of

different GaN FETs, or even logic level MOSFETs.

Note that throughout this data sheet, multifunction pins, such as

PLLIN/SPREAD, are referred to either by the entire pin name or

by a single function of the pin, for example, PLLIN, when only that

function is relevant.

FEATURES

? GaN drive technology fully optimized for GaN FETs

? Wide VIN range: 4 V to 100 V

? Wide output voltage range: 0.8 V ≤ VOUT ≤ 60 V

? No catch, clamp, or bootstrap diodes needed

? Internal smart bootstrap switches prevent overcharging of highside

driver supplies

? Internally optimized, smart near zero dead times or resistor

adjustable dead times

? Split output gate drivers for adjustable turn on and turn off driver

strengths

? Accurate adjustable driver voltage and UVLO

? Low operating IQ: 5 μA (48 VIN to 5 VOUT)

? Programmable frequency (100 kHz to 3 MHz)

? Phase lockable frequency (100 kHz to 3 MHz)

? Spread spectrum frequency modulation

? 28-lead (4 mm × 5 mm) side wettable QFN package

APPLICATIONS

? Industrial power systems

? Military avionics and medical systems

? Telecommunications power systems

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LITHIUM
24+
DIP4
35200
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LINEAR/凌特
23+
SOP-8
13000
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LINEAR
22+
原廠原封
1000
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Linear
23+
8-Dip
7750
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LINEAR
2020+
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4500
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lt
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4500
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LT
10+
DIP
7800
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2015+
DIP/SMD
19889
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22+
DIP
50000
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LT
2339+
DIP-8P
4652
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