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LSM835

8 Amp Schottky Rectifier

8AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●150°CJunctionTemperature ●VRRM35to45Volts ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

LSM835GE3/TR13

包裝：卷帶（TR） 封裝/外殼：DO-215AB，SMC 鷗翼 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 35V 8A DO215AB

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

LSM835J/TR13

包裝：托盤 封裝/外殼：DO-214AB，SMC 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 35V 8A DO214AB

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

LSM835JE3/TR13

包裝：卷帶（TR） 封裝/外殼：DO-214AB，SMC 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 35V 8A DO214AB

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

M835

M840CONNECTORHARNESSVEHICLESANDOFF-HIGHWAYMACHINERY

DSEDeep Sea Electronics

深海DSE英國深海電子有限公司

MAX835

Micropower,LatchingVoltageMonitorsinSOT23-5

GeneralDescription TheMAX834/MAX835micropowervoltagemonitorscontaina1.204Vprecisionbandgapreference,comparator,andlatchedoutputina5-pinSOT23package.Usingthelatchedoutputpreventsdeepdischargeofbatteries.TheMAX834hasanopen-drain,n-channeloutputdriver,whilethe

MaximMaxim Integrated Products

美信美信半導體

MAX835

Micropower,LatchingVoltageMonitorsinSOT23-5

MaximMaxim Integrated Products

美信美信半導體

MAX835EUK-T

Micropower,LatchingVoltageMonitorsinSOT23-5

GeneralDescription TheMAX834/MAX835micropowervoltagemonitorscontaina1.204Vprecisionbandgapreference,comparator,andlatchedoutputina5-pinSOT23package.Usingthelatchedoutputpreventsdeepdischargeofbatteries.TheMAX834hasanopen-drain,n-channeloutputdriver,whilethe

MaximMaxim Integrated Products

美信美信半導體

MAX835EUK-T

Micropower,LatchingVoltageMonitorsinSOT23-5

MaximMaxim Integrated Products

美信美信半導體

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODES

Diodes Incorporated

MBR835

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequencyinvert

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBR835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINGalaxy Semi-Conductor Holdings Limited

世紀微電子常州銀河世紀微電子股份有限公司

MBR835

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR835

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835RL

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequencyinvert

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBRB835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Gu

BILINGalaxy Semi-Conductor Holdings Limited

世紀微電子常州銀河世紀微電子股份有限公司

詳細參數(shù)

  • 型號：

    LSM835

  • 制造商：

    Microsemi Corporation

  • 功能描述：

    8.0A, 35V, VF=0.52V - Tape and Reel

  • 功能描述：

    DIODE SCHOTTKY 8A 35V SMCG

供應商型號品牌批號封裝庫存備注價格
Microsemi
16+
DO-214AB
88000
鍏ㄦ柊鍘熻鐜拌揣/浠鋒牸鍙皥!
 詢價
Microsemi
20+
DO-214AB
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
Microsemi
1942+
N/A
908
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
MICROSEMI
1809+
DO-214
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Microsemi
24+
DO-214AB
88000
原裝現(xiàn)貨假一賠十
 詢價
MICROSEMI/美高森美
22+
DO-214AB
354000
詢價
MICROSEMI/美高森美
2019+PB
DO-214AB
88000
大量庫存-特價
 詢價
MICROSEMI/美高森美
新年份
DO-214AB
88000
原裝正品大量現(xiàn)貨,要多可發(fā)貨,實單帶接受價來談!
 詢價
24+
N/A
56000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
Microsemi
2315+
DO214AB
88000
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢價
更多LSM835供應商 更新時間2024-11-16 15:26:00

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