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LOG200RGTR

LOG200Precision,High-SpeedLogarithmicAmplifierWithIntegratedPhotodiodeBias

1Features ?Ultra-fasttransientresponsetolowcurrentlevels: –Settlingtimefor10nAto100nAstep: 240nsrising,620nsfalling(typ) –Settlingtimefor100nAto1μAstep: 60nsrising,150nsfalling(typ) ?Widedynamicrange:10pAto10mA(180dB) –Specifiedfrom100pAto10mA(160d

TITexas Instruments

德州儀器美國德州儀器公司

LOG200RGTT

LOG200Precision,High-SpeedLogarithmicAmplifierWithIntegratedPhotodiodeBias

1Features ?Ultra-fasttransientresponsetolowcurrentlevels: –Settlingtimefor10nAto100nAstep: 240nsrising,620nsfalling(typ) –Settlingtimefor100nAto1μAstep: 60nsrising,150nsfalling(typ) ?Widedynamicrange:10pAto10mA(180dB) –Specifiedfrom100pAto10mA(160d

TITexas Instruments

德州儀器美國德州儀器公司

LOP-200

200W4×2LowProfileOpenFramePowerSupply

Features MEANWELLPatentNumber:ZL202223277512.1 4x2compactsizewithlowprofile(25.4mm) 80~264VacinputwithPFC,Noloadpowerconsumption

MEANWELLMean Well Enterprises Co., Ltd.

明緯電子明緯(廣州)電子有限公司

LP200

VacuumSuckingPen

FEATURES ESDsafe Lowcost Lightweight Smallvolume Strongsuction APPLICATIONS It’swidelyusedinSMTparts,metalparts,plasticpartsor anyitemhavingasmoothandnonporoussurfacethatthe rubbervacuumtweezertipcansealagainst. DESCRIPTION TheLP-200isastaticsafev

ANALOGTECHNOLOGIES

Analog Technologies, Inc.

LP-200

VacuumSuckingPen

FEATURES ESDsafe Lowcost Lightweight Smallvolume Strongsuction APPLICATIONS It’swidelyusedinSMTparts,metalparts,plasticpartsor anyitemhavingasmoothandnonporoussurfacethatthe rubbervacuumtweezertipcansealagainst. DESCRIPTION TheLP-200isastaticsafev

ANALOGTECHNOLOGIES

Analog Technologies, Inc.

LPC200CTP

VERTICALCLIPLITE4MMLITEPIPE

VCC

Visual Communications Company

LPD200

HIGHPERFORMANCEPHEMT

DESCRIPTIONANDAPPLICATIONS TheLPD200isanAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)PseudomorphicHighElectronMobilityTransistor(PHEMT),utilizinganElectron-Beamdirectwrite0.25mmby200mmSchottkybarriergate.Therecessed“mushroom”gatestructureminimiz

FILTRONIC

Filtronic Compound Semiconductors

LPD200MX

HIGHPERFORMANCEPHEMT

DESCRIPTIONANDAPPLICATIONS TheLPD200isanAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)PseudomorphicHighElectronMobilityTransistor(PHEMT),utilizinganElectron-Beamdirect-write0.25mmby200mmSchottkybarriergate.Therecessed“mushroom”Ti/Pt/Augatestructu

FILTRONIC

Filtronic Compound Semiconductors

LPE200BMB

LPE200BMBseries

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

LPJ-200SP

Low-Peak??LPJClassJ600Vac/300Vdc,70-600A,dualelement,time-delayfuses

EATONEaton All Rights Reserved.

伊頓伊頓公司

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