零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Ground-Referenced,UltraLowNoise,CeramicSpeakerDriver | NSCNational Semiconductor (TI) 美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司 | NSC | ||
PowerAmplifierSeriesGround-Referenced,UltraLowNoise,CeramicSpeakerDriver | TI1Texas Instruments 德州儀器 | TI1 | ||
Dual30VP-ChannelPowerTrenchMOSFET | POWERLowpower Semiconductor inc 微源半導(dǎo)體微源半導(dǎo)體股份有限公司 | POWER | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
SUPERLOWNOISEInGaAsHEMT(LeadlessCeramicPackage) DESCRIPTION TheMGF4953A/MGF4954Asuper-lownoiseHEMT(HighElectronMobilityTransistor)isdesignedforuseinCtoKbandamplifiers. Thelead-lessceramicpackageassuresminimumparasiticlosses. FEATURES Lownoisefigure@f=12GHz MGF4953A:NFmin.=0.40dB(Typ.) MGF49 | MitsubishiMitsubishi Electric Semiconductor 三菱電機(jī)三菱電機(jī)株式會(huì)社 | Mitsubishi | ||
SUPERLOWNOISEInGaAsHEMTLeadlessCeramicPackage DESCRIPTION TheMGF4953Bsuper-lownoiseHEMT(HighElectronMobilityTransistor)isdesignedforuseinKbandamplifiers. Thelead-lessceramicpackageassuresminimumparasiticlosses. FEATURES Lownoisefigure@f=20GHz NFmin.=0.55dB(Typ.) Highassociatedgain@f=20GHz | MitsubishiMitsubishi Electric Semiconductor 三菱電機(jī)三菱電機(jī)株式會(huì)社 | Mitsubishi | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
-30V(D-S)DualP-ChannelEnhancementModePowerMOSFET | MORESEMIMORE Semiconductor Company Limited 摩矽半導(dǎo)體摩矽半導(dǎo)體有限公司 | MORESEMI | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
NCEP-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
NCEP-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
SurgeClamping,TransientOvervoltageSuppressorBidirectional Description: TheNTE4900seriesofsiliconTransientSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighenergyvoltagetransients.Transientovervoltagesuppressordeviceshavebecomeveryimportantasaconsequenceoftheirhighsurgecapability,extremelyfastresponsetime | NTE NTE Electronics | NTE | ||
RFConnectorsTechnicalDataSheet | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
P-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
LM |
1527+ |
SOP-8 |
1302 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
LM |
23+ |
SOP-8 |
1302 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
LM |
23+ |
SOP-8 |
10000 |
原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
NS |
2020+ |
QFN-14 |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
NS/國(guó)半 |
23+ |
QFN-14 |
3000 |
一級(jí)代理原廠VIP渠道,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、 |
詢(xún)價(jià) | ||
NS |
22+ |
QFN-14 |
3000 |
原裝正品,支持實(shí)單 |
詢(xún)價(jià) | ||
TI |
2024+ |
原廠原裝 |
16000 |
原裝優(yōu)勢(shì)絕對(duì)有貨 |
詢(xún)價(jià) | ||
NS |
2402+ |
LLP-14 |
8324 |
原裝正品!實(shí)單價(jià)優(yōu)! |
詢(xún)價(jià) | ||
TexasInstruments |
18+ |
ICAMPAUDIOPWRMONOAB14LLP |
6580 |
公司原裝現(xiàn)貨/歡迎來(lái)電咨詢(xún)! |
詢(xún)價(jià) | ||
Texas Instruments |
24+ |
14-WFDFN 裸露焊盤(pán) |
65200 |
一級(jí)代理/放心采購(gòu) |
詢(xún)價(jià) |
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