首頁(yè) >LIS8514BDEMO>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Si85XXUNIDIRECTIONALACCURRENTSENSORS | etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | ||
SpecificationofGaAlAsIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SpecificationofGaAlAsIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
BipolarTransistorsSiliconNPNEpitaxialType Applications ?High-SpeedSwitching ?DC-DCConverters Features (1)HighDCcurrentgain:hFE=120to240(VCE=2V,IC=0.3A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=0.15V(max)(IC=1.0A,IB=0.1A) (3)High-speedswitching:tf=170ns(typ.)(IC=1.0A) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SpecificationofHighPowerIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedandass | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedandass | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
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