LH5PV8512中文資料夏普微數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word × 8 bit organization. It is fabricated using silicon-gate CMOS process technology.

FEATURES

? 524,288 words × 8 bit organization

? CE access time (tCEA): 120 ns (MAX.)

? Cycle time (tRC): 190 ns (MIN.)

? Power supply:

+3.0 V ± 0.15 V (Operating)

+2.2 V to +3.15 V (Data retention)

? Power consumption (MAX.):

126 mW (Operating)

95 μW (Standby = CMOS input level)

221 μW (Self-refresh = CMOS input level)

? Available for address refresh,

auto-refresh, and self-refresh modes

? 2,048 refresh cycles/32 ms

? Address non-multiple

? Not designed or rated as radiation hardened

? Package:

32-pin, 525-mil SOP

? Package material: Plastic

? Substrate material: P-type silicon

? Process: Silicon-gate CMOS

? Operating temperature: 0 - 70°C