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L6386E

High-voltage high and low side driver

Description TheL6386Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

L6386E

包裝：卷帶（TR） 封裝/外殼：14-DIP（0.300"，7.62mm） 類別：集成電路（IC） 柵極驅(qū)動(dòng)器 描述：IC GATE DRVR HALF-BRIDGE 14DIP

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

L6386ED

High-voltage high and low side driver

Description TheL6386Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

L6386ED013TR

High-voltage high and low side driver

Description TheL6386Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

L6386ED

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：14-SOIC（0.154"，3.90mm 寬） 類別：集成電路（IC） 柵極驅(qū)動(dòng)器 描述：IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

L6386ED013TR

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：14-SOIC（0.154"，3.90mm 寬） 類別：集成電路（IC） 柵極驅(qū)動(dòng)器 描述：IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MAX6386

SC70,Single/DualLow-Voltage,Low-Power關(guān)PResetCircuits

GeneralDescription TheMAX6381–MAX6390microprocessor(μP)supervisorycircuitsmonitorpower-supplyvoltagesfrom+1.8Vto+5.0Vwhileconsumingonly3μAofsupplycurrentat+1.8V.WheneverVCCfallsbelowthefactory-setresetthresholds,theresetoutputassertsandremainsassertedfora

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6386

SC70/關(guān)DFN,Single/DualLow-Voltage,Low-Power關(guān)PResetCircuits

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6386LT

SC70/關(guān)DFN,Single/DualLow-Voltage,Low-Power關(guān)PResetCircuits

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6386LT__D_+T

SC70/μDFN,Single/DualLow-Voltage,Low-PowerμPResetCircuits

GeneralDescription TheMAX6381–MAX6390microprocessor(μP)supervisorycircuitsmonitorpower-supplyvoltagesfrom+1.8Vto+5.0Vwhileconsumingonly3μAofsupplycurrentat+1.8V.WheneverVCCfallsbelowthefactory-setresetthresholds,theresetoutputassertsandremainsassertedfora

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6386XS

SC70/關(guān)DFN,Single/DualLow-Voltage,Low-Power關(guān)PResetCircuits

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6386XS__D_+T

SC70/μDFN,Single/DualLow-Voltage,Low-PowerμPResetCircuits

GeneralDescription TheMAX6381–MAX6390microprocessor(μP)supervisorycircuitsmonitorpower-supplyvoltagesfrom+1.8Vto+5.0Vwhileconsumingonly3μAofsupplycurrentat+1.8V.WheneverVCCfallsbelowthefactory-setresetthresholds,theresetoutputassertsandremainsassertedfora

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MDT6386

HORNANTENNAS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SGA-6386

DC-3000MHz,CascadableSiGeHBTMMICAmplifier

ProductDescription StanfordMicrodevicesSGA-6386isahighperformanceSiGeHBTMMICAmplifier.ADarlingtonconfigurationfeaturing1micronemittersprovideshighFTandexcellentthermalperfomance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurrentbetweenjunction

STANFORD

Stanford Microdevices

SGA-6386

DC-5000MHz,CascadableSiGeHBTMMICAmplifier

TheSGA-6386isahighperformanceSiGeHBTMMICAmplifier.ADarlingtonconfigurationfeaturing1micronemittersprovideshighFTandexcellentthermalperfomance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurrentbetweenjunctions.Cancellationofemitterjunctionnon

SIRENZA

SIRENZA MICRODEVICES

SGA6386Z

DCto5000MHz,CASCADABLESiGeHBTMMICAMPLIFIER

RFMD

RF Micro Devices

SGA-6386Z

DC-5000MHz,CascadableSiGeHBTMMICAmplifier

TheSGA-6386isahighperformanceSiGeHBTMMICAmplifier.ADarlingtonconfigurationfeaturing1micronemittersprovideshighFTandexcellentthermalperfomance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurrentbetweenjunctions.Cancellationofemitterjunctionnon

SIRENZA

SIRENZA MICRODEVICES

SGA6386ZSQ

DCto5000MHz,CASCADABLESiGeHBTMMICAMPLIFIER

RFMD

RF Micro Devices

SGA6386ZSR

DCto5000MHz,CASCADABLESiGeHBTMMICAMPLIFIER

RFMD

RF Micro Devices

SG-BGA-6386

Ballguidepreventsovercompressionofelastomer

IRONWOOD

Ironwood Electronics.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    L6386E

  • 制造商：

    STMicroelectronics

  • 類別：

    集成電路（IC） > 柵極驅(qū)動(dòng)器

  • 包裝：

    卷帶（TR）

  • 驅(qū)動(dòng)配置：

    半橋

  • 通道類型：

    獨(dú)立式

  • 柵極類型：

    IGBT，N 溝道 MOSFET

  • 電壓 - 供電：

    17V（最大）

  • 邏輯電壓?- VIL，VIH：

    1.5V，3.6V

  • 電流 - 峰值輸出（灌入，拉出）：

    400mA，650mA

  • 輸入類型：

    反相

  • 上升/下降時(shí)間（典型值）：

    50ns，30ns

  • 工作溫度：

    -40°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    14-DIP（0.300"，7.62mm）

  • 供應(yīng)商器件封裝：

    14-DIP

  • 描述：

    IC GATE DRVR HALF-BRIDGE 14DIP

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST
23+
8-DIP
26163
詢價(jià)
STM
24+
28
詢價(jià)
STMicroelectronics
23+
14-Dip
7750
全新原裝優(yōu)勢
 詢價(jià)
STM
22+
原廠原封
5000
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢!!
 詢價(jià)
ST
23+
8-DIP
65600
詢價(jià)
STMicroelectronics
24+
14-DIP
65200
一級(jí)代理/放心采購
 詢價(jià)
STM
24+
原廠封裝
7304
原裝現(xiàn)貨
 詢價(jià)
STM
20+
DIP-14
1001
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
22+
NA
3000
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 詢價(jià)
更多L6386E供應(yīng)商 更新時(shí)間2025-1-16 14:00:00

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