首頁(yè) >KSMU11P06>規(guī)格書列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

KSMU11P06

Excellent package for good heat dissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

11P06

60VP-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB11P06

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.175Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQB11P06

60VP-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB11P06

60VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB11P06TM

P-ChannelQFETMOSFET-60V,-11.4A,175m廓

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD11P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD11P06

P-ChannelQFET?MOSFET-60V,-9.4A,185m廓

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD11P06

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQD11P06TM

P-channelEnhancementModePowerMOSFET

Features ?VDS=-60V,ID=-20A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
KERSEMI
24+
TO-251
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
KERSEMI
23+
TO-251
10000
公司只做原裝正品
詢價(jià)
KERSEMI
TO-251
22+
6000
十年配單,只做原裝
詢價(jià)
KERSEMI
23+
TO-251
6000
原裝正品,支持實(shí)單
詢價(jià)
KERSEMI
22+
TO-251
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
KERSEMI
24+
TO-251
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
KERSEMI/科盛美
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
KERSEMI
21+
TO-251
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
KERSEMI/科盛美
23+
NA/
3749
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
KERSEMI
TO-251
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
更多KSMU11P06供應(yīng)商 更新時(shí)間2025-1-22 10:20:00