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KSH45H11TF

PNP Epitaxial Silicon Transistor

Description General-purposepowerandswitchingsuchasoutputordriverstagesinapplicationsD-PAKforsurfacemountapplications. Features ?LeadFormedforSurfaceMountApplication(NoSuffix) ?StraightLead(I-PAK,“-I”Suffix) ?ElectricallySimilartoPopularKSE45H ?FastSwitchi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSH45H11TF

包裝:卷帶(TR) 封裝/外殼:TO-252-3,DPak(2 引線 + 接片),SC-63 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS PNP 80V 8A DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

KSH45H11TM

PNPEpitaxialSiliconTransistor

Description General-purposepowerandswitchingsuchasoutputordriverstagesinapplicationsD-PAKforsurfacemountapplications. Features ?LeadFormedforSurfaceMountApplication(NoSuffix) ?StraightLead(I-PAK,“-I”Suffix) ?ElectricallySimilartoPopularKSE45H ?FastSwitchi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJB45H11

iscSiliconPNPPowerTransistor

DESCRIPTION ?LowCollector-Emittersaturationvoltage ?Pb-freepackageareavailable ?Fastswitchingspeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Generalpurposeamplificationandswitchingsuchasoutor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJB45H11

ComplementaryPowerTransistors

ComplementaryPowerTransistors D2PAKforSurfaceMount Complementarypowertransistorsareforgeneralpurposepoweramplificationandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,convertersandpoweramplifiers. Features ?LowCollector?EmitterSatu

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11

ComplementaryPowerTransistorsD2PAKforSurfaceMount

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11

ComplementaryPowerTransistorsD2PAKforSurfaceMount

Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0V(Max)@8.0A ?F

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0V(Max)@8.0A ?F

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11G

iscSiliconPNPPowerTransistor

DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Pb-freepackageareavailable ·Fastswitchingspeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Generalpurposeamplificationandswitchingsuchas outordriverstagesinapplicati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD45H11

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11

Designedforgeneralpurposepowerandswitching

RECTRON

Rectron Semiconductor

MJD45H11

ComplementaryPowerTransistorsSILICONPOWERTRANSISTORS8AMPERES

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11

COMPLEMENTARYSILICONPNPTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD45H11

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11

GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplicationsD-PAKforSurfaceMountApplications

GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplications D-PAKforSurfaceMountApplications ?LoadFormedforSurfaceMountApplication(NoSuffix) ?StraightLead(I-PAK:“-I”Suffix) ?ElectricallySimilartoPopularMJE45H ?FastSwitchingSpeeds ?LowCollect

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD45H11

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?Pb?FreePackagesareAvailable ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?Stra

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11

SILICONPOWERTRANSISTORS8AMPERES80VOLTS20WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. ?LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    KSH45H11TF

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

  • 包裝:

    卷帶(TR)

  • 晶體管類型:

    PNP

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):

    1V @ 400mA,8A

  • 電流 - 集電極截止(最大值):

    10μA

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

    40 @ 4A,1V

  • 頻率 - 躍遷:

    40MHz

  • 工作溫度:

    150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    TO-252-3,DPak(2 引線 + 接片),SC-63

  • 供應(yīng)商器件封裝:

    D-Pak

  • 描述:

    TRANS PNP 80V 8A DPAK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD/仙童
24+
TO252
8950
BOM配單專家,發(fā)貨快,價(jià)格低
詢價(jià)
ON/安森美
24+
252-251
504556
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
ONSEMI/安森美
23+
TO-252-3
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低
詢價(jià)
SAMSUNG
23+
TO-252
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價(jià)
FAIRCHILD
24+
TO-252
6980
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
SAMSUNG
16+
TO-
200
原裝現(xiàn)貨假一罰十
詢價(jià)
SAMSUNG
23+
TO-252
5000
原裝正品,假一罰十
詢價(jià)
FAI
24+
2000
詢價(jià)
SAMSANG
19+
TO-252
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
SAMSUNG
24+
TO-252
2789
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨!
詢價(jià)
更多KSH45H11TF供應(yīng)商 更新時(shí)間2024-12-27 16:36:00