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KIT-BB830+ZW

A BB830 Solderless Plug-in BreadBoard with ZW-MM-10 ZipWire Male-to-Male unzippable wires

Features: ?830tiepointstotal:630tie-pointIC-circuit areaplustwo100tie-pointdistribution stripsproviding4powerrails. ?WhiteABSplasticbodywithblackprinted legend.Colorlegendondistributionstrips. ?ContactsarePhosphorBronzewithPlated NickelFinish,ratedfor50

BUSBOARD

BusBoard Prototype Systems Ltd.

KRC830E

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity.

KECKEC CORPORATION

KEC株式會社

KRC830U

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity.

KECKEC CORPORATION

KEC株式會社

KSM830

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB830

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF830

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KT830

SLOTTEDOPTICALSWITCHESPHOTOTRANSISTOROUTPUT

Optek

OPTEK Technologies

LED830

BlueLEDLamp

ROITHNER

Roithner LaserTechnik GmbH

LS830

ULTRALOWLEAKAGELOWDRIFTMONOLITHICDUALN-CHANNELJFET

FEATURES ULTRALOWDRIFT│ΔVGS1-2/ΔT│=5μV/oCmax. ULTRALOWNOISEIG=80fATYP. LOWNOISEen=70nV/√HzTYP. LOWCAPACITANCECISS=3pfmax.

LINEAR

Linear Integrated Systems

LS830

LinearSystemsUltraLowLeakageLowDriftMonolithicDualJFET

TheLS830isahigh-performancemonolithicdualJFETfeaturingextremelylownoise,tightoffsetvoltageandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplications.TheLS830featuresa5-mVoffsetand10-μV/°Cdrift.The8Pin

MICROSS

Micross Components

LS830_PDIP

LinearSystemsUltraLowLeakageLowDriftMonolithicDualJFET

TheLS830isahigh-performancemonolithicdualJFETfeaturingextremelylownoise,tightoffsetvoltageandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplications.TheLS830featuresa5-mVoffsetand10-μV/°Cdrift.The8Pin

MICROSS

Micross Components

LT830

PhotoDMOS-FETRelay

Description TheLT830isa1-FormAsolidstaterelayinan6pinDIPpackagethatemploysoptically coupledMOSFETtechnologytoprovide3750Vofinputtooutputisolation.The opticallycoupledinputiscontrolledbyahighlyefficientGaAlAsinfraredLEDand MOSFETsontheoutputside. Fe

LETEXLETEX technology corp

臺灣麗太麗太科技股份有限公司

M830

12.249Gb/sOC-192Clock&DataRecoveryTransmitterModule

ICSTChina Resources Microelectronics Limited Limited

華潤微電子華潤微電子有限公司

M830D

12.249Gb/sOC-192Clock&DataRecoveryTransmitterModule

ICSTChina Resources Microelectronics Limited Limited

華潤微電子華潤微電子有限公司

MANO830

PCIExpressMiniCardsupported

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

MAX830

5V/3.3V/3V/Adjustable-Output,1A,Step-Down,PWM,Switch-ModeDC-DCRegulators

GeneralDescription TheMAX830/MAX831/MAX832/MAX833aremonolithic,bipolar,pulse-width-modulation(PWM),switch-mode,stepdownDC-DCregulators.Eachisratedat1A.Veryfewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscillator,feedback,andcontrolcircui

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX830CWE

5V/3.3V/3V/Adjustable-Output,1A,Step-Down,PWM,Switch-ModeDC-DCRegulators

GeneralDescription TheMAX830/MAX831/MAX832/MAX833aremonolithic,bipolar,pulse-width-modulation(PWM),switch-mode,stepdownDC-DCregulators.Eachisratedat1A.Veryfewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscillator,feedback,andcontrolcircui

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODES

Diodes Incorporated

MBR830

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR830

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

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更多KIT-BB830+ZW供應(yīng)商 更新時(shí)間2025-1-14 10:08:00

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