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KF7N60P

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactor correctionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,

KECKEC CORPORATION

KEC株式會社

KF7N60P

N-Channel 600 V (D-S)Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledriverequirement ?Improvedgate,avalancheanddynamicdV/dtruggedness ?Fullycharacterizedcapacitanceandavalanchevoltageandcurrent APPLICATIONS ?Switchmodepowersupply(SMPS) ?Uninterruptiblepowersupply ?Highspeedpowerswit

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

KF7N60P_15

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KECKEC CORPORATION

KEC株式會社

KSM7N60

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSM7N60NZ

N-ChannelUniFETllMOSFET600V,6.5A,1.25

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB7N60

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD7N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF7N60

Lowgatecharge.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF7N60NZ

N-ChannelUniFETllMOSFET600V,6.5A,1.25

KERSEMI

Kersemi Electronic Co., Ltd.

MDF7N60

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF7N60BTH

N-ChannelMOSFET600V,7.0A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF7N60BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MDF7N60TH

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF7N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MDP7N60

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60B

N-ChannelMOSFET600V,7.0A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60BTH

N-ChannelMOSFET600V,7.0A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60TH

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MGP7N60E

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbothahightemperatureshortcircuitcapabilityandalowVCE(on)

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細參數(shù)

  • 型號：

    KF7N60P

  • 制造商：

    KEC

  • 制造商全稱：

    KEC(Korea Electronics)

  • 功能描述：

    N CHANNEL MOS FIELD EFFECT TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
K
23+
TO-220
10000
公司只做原裝正品
 詢價
KEC
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VBsemi
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
KEC
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
KEC
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
KEC
2022+
TO-220
32500
原廠代理 終端免費提供樣品
 詢價
VB
TO-220
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
KEC
23+
TO-220
6000
原裝正品，支持實單
 詢價
KEC
12+
TO-220
10
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
KEC
23+
NA/
3260
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
更多KF7N60P供應商 更新時間2025-1-10 14:30:00

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