| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
KF4N80F | This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID | MORNSUNGuangzhou Jinshengyang Technology Co., Ltd 金升陽廣州金升陽科技有限公司 | MORNSUN | |
KF4N80F | N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID | KECKEC CORPORATION KEC株式會社 | KEC | |
KF4N80F | Power MOSFET FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | KECKEC CORPORATION KEC株式會社 | KEC | ||
800VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Greendeviceavailable. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
800VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
TMOSPOWERFET4.0AMPERES800VOLTS TMOSE-FETHighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithh | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM TMOSE-FET?PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Ina | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-ChannelEnhancement-ModeSiliconGate | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM TMOSE-FET?PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Ina | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSE-FETPOWERFIELDEFFECTTRANSISITORN-CHANNELENHANCEMENT-MODESILICONGATE | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSE-FETPOWERFIELDEFFECTTRANSISITORN-CHANNELENHANCEMENT-MODESILICONGATE | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
4.0A800VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
4.0A800VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
4.0A800VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
4.0A800VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
4.0A800VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ |
詳細(xì)參數(shù)
- 型號：
KF4N80F
- 制造商：
MORNSUN
- 制造商全稱：
MORNSUN
- 功能描述：
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
K |
23+ |
TO-220F |
10000 |
公司只做原裝正品 |
詢價 | ||
KEC |
2022+ |
TO-220F |
32500 |
原廠代理 終端免費(fèi)提供樣品 |
詢價 | ||
K |
23+ |
TO-220F |
6000 |
原裝正品，支持實單 |
詢價 | ||
KEC |
2022+ |
TO-220F |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
KEC |
20+ |
TO-220F |
32500 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價 | ||
K |
24+ |
TO-TO-220F |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價 | ||
KEC品牌 |
22+23+ |
TO-220IS( |
18498 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
KEC品牌 |
19+ |
TO-220IS(1) |
30000 |
原裝正品,價格優(yōu) |
詢價 | ||
KEC品牌 |
2020+ |
TO-220I |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
KEC |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
